Strain-induced bound states in transition-metal dichalcogenide bubbles
| Autor: | Rafael Roldán, Pablo San-Jose, Luca Chirolli, Elsa Prada, Francisco Guinea |
|---|---|
| Přispěvatelé: | UAM. Departamento de Física de la Materia Condensada |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Layered semiconductors Bubble Hydrostatic pressure FOS: Physical sciences Molybdenum compounds 02 engineering and technology Electron 01 natural sciences Selenium compounds Semiconducting selenium compounds symbols.namesake Van der Waals forces 0103 physical sciences Bound state Mesoscale and Nanoscale Physics (cond-mat.mes-hall) General Materials Science 010306 general physics Condensed Matter - Materials Science Condensed matter physics Condensed Matter - Mesoscale and Nanoscale Physics Mechanical Engineering Materials Science (cond-mat.mtrl-sci) Física General Chemistry Radius Transition metals 021001 nanoscience & nanotechnology Condensed Matter Physics Mechanics of Materials Density of states symbols Tungsten compounds Berry connection and curvature van der Waals force 0210 nano-technology |
| Zdroj: | Biblos-e Archivo. Repositorio Institucional de la UAM instname Repositorio Institucional del Instituto Madrileño de Estudios Avanzados en Nanociencia |
| ISSN: | 2053-1583 |
| DOI: | 10.1088/2053-1583/ab0113 |
| Popis: | This is an author-created, un-copyedited version of an article published in 2D Materials. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/2053-1583/ab0113 We theoretically study the formation of single-particle bound states confined by strain at the center of bubbles in monolayers of transition-metal dichalcogenides (TMDs). Bubbles ubiquitously form in two-dimensional crystals on top of a substrate by the competition between van der Waals forces and the hydrostatic pressure exerted by trapped fluid. This leads to strong strain at the center of the bubble that reduces the bangap locally, creating potential wells for the electrons that confine states inside. We simulate the spectrum versus the bubble radius for the four semiconducting group VI TMDs, MoS2, WSe2, WS2 and MoSe2, and find an overall Fock-Darwin spectrum of bubble bound states, characterised by small deviations compatible with Berry curvature effects. We analyse the density of states, the state degeneracies, orbital structure and optical transition rules. Our results show that elastic bubbles in these materials are remarkably efficient at confining photocarriers We acknowledge funding from the Graphene Flagship, contract CNECTICT-604391, from the Comunidad de Madrid through Grant MAD2D-CM, S2013/MIT-3007, from the Spanish Ministry of Economy and Competitiveness through Grants No. RYC-2011-09345, RYC-2016-20663, FIS2015-65706-P, FIS2016-80434-P (AEI/FEDER, EU) and the María de Maeztu Programme for Units of Excellence in R&D (MDM-2014-0377) |
| Databáze: | OpenAIRE |
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