Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

Autor: Tristan Meunier, Mikael Casse, Fred Gaillard, Silvano De Franceschi, Maud Vinet, Thorsten Kammler, Christoforos G. Theodorou, L. Pirro, Gerard Ghibaudo, Bruna Cardoso Paz
Přispěvatelé: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Circuits électroniques quantiques Alpes (QuantECA), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), GLOBALFOUNDRIES, fab 1, Circuits électroniques quantiques Alpes (NEEL - QuantECA)
Rok vydání: 2020
Předmět:
Zdroj: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (11), pp.4563-4567. ⟨10.1109/TED.2020.3021999⟩
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4563-4567. ⟨10.1109/TED.2020.3021999⟩
ISSN: 1557-9646
0018-9383
Popis: International audience; This work presents the performance and low-frequency noise (LFN) of 22-nm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The experimental measurements and the analysis are performed as a function of temperature for the first time, focusing on cryogenic applications, down to 4.2 K. The back bias impact on device performance is evaluated. The results reveal that the threshold voltage tuning is found to be temperature independent, allowing extra drain current improvement. This is particularly interesting for short channel devices, whose drain current gain with temperature lowering is expected to be smaller in comparison with long channel MOSFETs. LFN is characterized by means of time-domain current sampling measurements. Moderate and strong inversion regimes are investigated. The carrier number with correlated mobility fluctuations model can well describe the 1/f noise behavior down to 4.2 K. The physical origin behind the drain current noise-to-signal power augmentation with temperature lowering could be mainly attributed to the normalized transconductance improvement.
Databáze: OpenAIRE