Dip Coating Passivation of Crystalline Silicon by Lewis Acids
| Autor: | Ali Javey, Hossain M. Fahad, Der Hsien Lien, James Bullock, Yingbo Zhao, Wenbo Ji, Stefaan De Wolf, Thomas Wesley Allen |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Passivation Silicon General Engineering Dangling bond General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Carrier lifetime 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Dip-coating 0104 chemical sciences chemistry.chemical_compound chemistry Chemical engineering Nafion General Materials Science Wafer Crystalline silicon 0210 nano-technology |
| Zdroj: | ACS nano. 13(3) |
| ISSN: | 1936-086X |
| Popis: | The reduction of carrier recombination processes by surface passivation is vital for highly efficient crystalline silicon (c-Si) solar cells and bulk wafer metrological characterization. Herein, we report a dip coating passivation of silicon surfaces in ambient air and temperature with Nafion, achieving a champion effective carrier lifetime of 12 ms on high resistivity n-type c-Si, which is comparable to state-of-the-art passivation methods. Nafion is a nonreactive polymer with strong Lewis acidity, thus leading to the formation of a large density of fixed charges at silicon surface, 1-2 orders of magnitude higher than what is achievable with conventional thin-film passivation layers. Notably, Nafion passivates the c-Si surface only by the fixed charges without chemical modification of dangling bonds, which is fundamentally different from the common practice of combining chemical with field-effect passivation. This dip coating process is simple and robust, without the need for complex equipment or parameter optimization as there is no chemical reaction involved. |
| Databáze: | OpenAIRE |
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