Ripple-Free Boost-Mode Power Supply Using Photonic Power Conversion

Autor: Christopher E. Valdivia, Ercan M. Dede, Masanori Ishigaki, Simon Fafard, Karin Hinzer, Matthew M. Wilkins, Denis Masson, Philippe-Olivier Provost
Přispěvatelé: Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Broadcom Semiconductors ULC, Université d'Ottawa [Ontario] (uOttawa), Recep Tayyip Erdogan University, Turkey
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Zdroj: IEEE Transactions on Power Electronics
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2019, 34 (2), pp.1054-1064. ⟨10.1109/TPEL.2018.2843158⟩
ISSN: 0885-8993
DOI: 10.1109/TPEL.2018.2843158⟩
Popis: Photonic power converters (PPCs) are a class of photovoltaic devices designed for efficient conversion of monochromatic (laser or LED) light to electricity. These devices are composed of multiple p-n junction diodes arranged in a tandem configuration and connected in series. They have reached high energy conversion efficiencies (70%) and areal power densities of 100 W/cm $^2$ . When these devices are illuminated with a high-efficiency diode laser, they can provide isolated dc–dc conversion from the laser voltage ( $^{3}$ , compared with 1.5 W/cm $^{3}$ for the reference. Relative to switch-mode power conversion, the photonic technology has lower efficiency and lower power density, but superior isolation and rejection of ripple and EMI. Both technologies are highly scalable. For the second application, the same unit is applied to power a 650-V SiC mosfet gate driver requiring high galvanic isolation, demonstrating a 20 dB reduction in conducted-current EMI from the power circuit into the low-voltage control systems.
Databáze: OpenAIRE