Wide variations of SiCxNy:H thin films optical constants deposited by H2/N2/Ar/hexamethyldisilazane microwave plasma

Autor: Laurent Le Brizoual, Patrice Miska, M. Belmahi, Ludovic de Poucques, Jamal Bougdira, Simon Bulou
Přispěvatelé: Institut Jean Lamour (IJL), Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut d'Électronique et des Technologies du numéRique (IETR), Université de Nantes (UN)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Nantes Université (NU)-Université de Rennes 1 (UR1), Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)
Rok vydání: 2012
Předmět:
Zdroj: Surface and Coatings Technology
Surface and Coatings Technology, Elsevier, 2012, 208, pp.46-50. ⟨10.1016/j.surfcoat.2012.07.079⟩
Surface and Coatings Technology, 2012, 208, pp.46-50. ⟨10.1016/j.surfcoat.2012.07.079⟩
ISSN: 0257-8972
1879-3347
Popis: SiC x N y :H thin film growth has been achieved in N 2 /H 2 /Ar/hexamethyldisilazane microwave plasma induced chemical vapor deposition process. Depending on the N 2 and H 2 flow rates, film composition can be changed from “SiC x :H-like” to “SiN x :H-like”. Therefore, refractive index ( n ) and Tauc's optical gap ( Eg ) are modified over a wide range of values (1.75 ≤ n ≤ 2.15 and 3.5 eV ≤ Eg ≤ 5 eV). In addition, n and Eg values are closely related to Si C bonding density. N 2 addition to the plasma leads to the substitution of Si C by Si N bonds in the film and results in important composition and optical constants variations. This “silane free” process appears as an interesting plasma induced chemical vapor deposition process for silicon-based coating synthesis in the field of optical applications.
Databáze: OpenAIRE