Fabrication control of MoS2/MoO2 nanocomposite via chemical vapor deposition for optoelectronic applications

Autor: D. Mouloua, N.S. Rajput, J.-F. Blach, M. Lejeune, M. El Marssi, M.A. El Khakani, M. Jouiad
Přispěvatelé: Laboratoire de Physique de la Matière Condensée - UR UPJV 2081 (LPMC), Université de Picardie Jules Verne (UPJV), Institut National de la Recherche Scientifique, Centre Énergie, Matériaux et Télécommunications, Canada, Abu Dhabi University (ADU), UCCS Équipe Couches Minces & Nanomatériaux, Unité de Catalyse et Chimie du Solide - UMR 8181 (UCCS), Université d'Artois (UA)-Centrale Lille-Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université d'Artois (UA)-Centrale Lille-Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Materials Science and Engineering: B
Materials Science and Engineering: B, 2022, 286, pp.116035. ⟨10.1016/j.mseb.2022.116035⟩
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2022.116035⟩
Popis: International audience; We report on the fabrication and control of MoS2/MoO2 nanocomposites exhibiting various optoelectronic properties. We demonstrate the growth of various compositions, shapes and crystalline structures by chemical vapor deposition (CVD). Microplates 1 to 30 µm to highly crystalline nanowires ∼ 100 nm in diam. are obtained. Our findings show that depending on the MoO2 content the band gap varies from 2 eV to 2.4 eV, whereas nanowires sample exhibits the lowest reflectance ≤ 10 % for λ ≥ 450 nm. Furthermore, the photoelectric properties of the produced samples were characterized by integrating them into photoconductive devices. Our results demonstrate a good photoresponse achieving 2 × 104 %, a responsivity as high as 1.13 mA/W, and a specific detectivity of 2.6 × 109 Jones for the nanowires, with a relatively rapid rise and decay times 1.6 s and 0.8 s, respectively. This work emphasizes the high potential of MoS2/MoO2 nanocomposite for the development of highly responsive optoelectronic devices.
Databáze: OpenAIRE