Defect levels in Cu(In,Ga)Se2studied using capacitance and photocurrent techniques
| Autor: | K. Macielak, A. Urbaniak, Piotr Szaniawski, Marika Edoff, Malgorzata Igalson |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Photocurrent Electron mobility Materials science business.industry Photovoltaic system Analytical chemistry Schottky diode 02 engineering and technology Electron 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Capacitance 0103 physical sciences Optoelectronics General Materials Science Thin film 0210 nano-technology business |
| Zdroj: | Journal of Physics: Condensed Matter. 28:215801 |
| ISSN: | 1361-648X 0953-8984 |
| DOI: | 10.1088/0953-8984/28/21/215801 |
| Popis: | This work contributes to the discussion on defect levels in Cu(In,Ga)Se2 photovoltaic material. CuInSe2- and Cu(In,Ga)Se2- based Schottky junctions, solar cells and thin films were investigated using complementary capacitance and current spectroscopic techniques. Depending on the applied technique and type of investigated structure, six different signals were observed. Out of the signals identified, three were ascribed to responses from bulk defects-two electron and one hole trap. The remainder were discussed in light of available in-literature models including carrier mobility freeze-out and non-ohmic back junction. |
| Databáze: | OpenAIRE |
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