Polaron framework to account for transport properties in metallic epitaxial manganite films

Autor: D. Busquets-Mataix, N. Homonnay, Mirko Prezioso, Patrizio Graziosi, Alessandro Gambardella, Georg Schmidt, Alberto Riminucci, Daniele Pullini, Ilaria Bergenti
Jazyk: angličtina
Rok vydání: 2014
Předmět:
Zdroj: RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname
Physical review. B, Condensed matter and materials physics 89 (2014). doi:10.1103/PhysRevB.89.214411
info:cnr-pdr/source/autori:Graziosi, Patrizio; Gambardella, Alessandro; Prezioso, Mirko; Riminucci, Alberto; Bergenti, Ilaria; Homonnay, Nico; Schmidt, Georg Cornelius; Pullini, Daniele; Busquets-Mataix, David/titolo:Polaron framework to account for transport properties in metallic epitaxial manganite films/doi:10.1103%2FPhysRevB.89.214411/rivista:Physical review. B, Condensed matter and materials physics/anno:2014/pagina_da:/pagina_a:/intervallo_pagine:/volume:89
ISSN: 2010-2461
DOI: 10.1103/PhysRevB.89.214411
Popis: [EN] We propose a model for the consistent interpretation of the transport behavior of manganese perovskites in both the metallic and insulating regimes. The concept of polarons as charge carriers in the metallic ferromagnetic phase of manganites also solves the conflict between transport models, which usually neglects polaron effects in the metallic phase, and, on the other hand, optical conductivity, angle-resolved spectroscopy, and neutron scattering measurements, which identify polarons in the metallic phase of manganites down to 6 K. Transport characterizations of epitaxial La0.7Sr0.3MnO3 thin films in the thickness range of 5-40 nm and temperature interval of 25-410 K have been accurately collected. We show that taking into account polaron effects allows us to achieve an excellent fit of the transport curves in the whole temperature range. The current carriers density collapse picture accurately accounts for the properties variation across the metal-insulator transitions. The electron-phonon coupling parameter gamma estimations are in a good agreement with theoretical predictions. The results promote a clear and straightforward quantitative description of the manganite films involved in charge transport device applications and promises to describe other oxide systems involving a metal-insulator transition.
The authors P.G., A.G., M.P., A.R., and I.B. thank F. Bona for technical help and A. Dediu and V. Kabanov for fruitful discussions. Financial support from the FP7 Projects No. NMP3-LA-2010-246102 (Interfacing oxides, IFOX), No. NMP-2010-SMALL-4-263104 (Next generation hybrid interfaces for spintronic applications, HINTS), No. NMP3-SL-2010-246073 (Graphene for nanoscaled applications, GRENADA), and the Italian government FIRB (Molecular nanomagnets on metallic and magnetic surfaces for applications in molecular spintronics) Project No. RBAP117RWN is acknowledged.
Databáze: OpenAIRE