Recovery of Gallium from Simulated GaAs Waste Etching Solutions by Solvent Extraction
| Autor: | Li Pang Wang, Yi Fan Chung, Cheng Han Lee, Ko Wei Tien, Wei Sheng Chen |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Geography Planning and Development Inorganic chemistry TJ807-830 Gallium chloride chemistry.chemical_element Hydrochloric acid 02 engineering and technology 010501 environmental sciences Management Monitoring Policy and Law TD194-195 01 natural sciences Renewable energy sources Gallium arsenide chemistry.chemical_compound GE1-350 Gallium Arsenic 0105 earth and related environmental sciences Environmental effects of industries and plants arsenic precipitation Renewable Energy Sustainability and the Environment Extraction (chemistry) Raffinate 021001 nanoscience & nanotechnology gallium arsenide bis(2 4 4-trimethylpentyl) phosphinic acid Environmental sciences cyanex 272 chemistry Gallium trichloride 0210 nano-technology |
| Zdroj: | Sustainability, Vol 12, Iss 5, p 1765 (2020) Sustainability Volume 12 Issue 5 |
| ISSN: | 2071-1050 |
| DOI: | 10.3390/su12051765 |
| Popis: | Gallium arsenide is used in semiconductor industries worldwide. Numerous waste etching solutions are produced during the processes of GaAs wafer production. Therefore, a complete and eco-friendly technology should be established to recover gallium as a gallium chloride solution and remove arsenic ion from waste GaAs etching solution. In this study, the gallium trichloride and arsenic trisulfide powders were dissolved in ammonia solutions to prepare the simulated solutions, and the pH value was adjusted to pH 2 by nitric acid. In the extraction step, the GaAs etching solutions were extracted using 0.5 M Cyanex 272 solutions in kerosene at pH 2 and 0.1 O/A ratio for 5 min. The extraction efficiency attained 77.4%, which had an optimal ratio of concentration, and the four steps extraction efficiency attained 99.5%. After extraction, iron sulfate heptahydrates were added into the raffinate, and the arsenic ions were precipitated. The removed rate attained 99.9% when the Fe/As ratio was 10. In the stripping step, the organic phase was stripped with 0.5 M hydrochloric acid at 1 O/A ratio for 3 min, and 97.5% gallium was stripped. Finally, the purity of gallium chloride solution was 99.95% and the gallium was seven times the concentration of the etching solutions. |
| Databáze: | OpenAIRE |
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