Silver Deposition onto Modified Silicon Substrates
| Autor: | Chaoying Ni, Sana Rani, Yichen Duan, Yuying Zhang, John T. Newberg, Andrew V. Teplyakov |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Nanostructure Silicon Scanning electron microscope Inorganic chemistry chemistry.chemical_element 02 engineering and technology Substrate (electronics) 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Article 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Metal General Energy chemistry X-ray photoelectron spectroscopy visual_art visual_art.visual_art_medium Reactivity (chemistry) Physical and Theoretical Chemistry 0210 nano-technology Deposition (chemistry) |
| Zdroj: | The Journal of Physical Chemistry C. 121:7240-7247 |
| ISSN: | 1932-7455 1932-7447 |
| Popis: | Trimethylphosphine(hexafluoroacetylacetonato)silver(I) was used as a precursor to deposit silver onto silicon surfaces. The deposition was performed on silicon-based substrates including silica, H-terminated Si(100), and OH-terminated (oxidized) Si(100). The deposition processes at room temperature and elevated temperature (350 °C) were compared. The successful deposition resulted in nanostructures or nanostructured films as confirmed by atomic force microscopy (AFM) and scanning electron microscopy (SEM) with metallic silver being the majority deposited species as confirmed by X-ray photoelectron spectroscopy (XPS). The reactivity of the precursor depends drastically not only on the temperature of the process but also on the type of substrate. Density functional theory (DFT) was used to explain these differences and to propose the mechanisms for the initial deposition steps. |
| Databáze: | OpenAIRE |
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