Structural and optical characterization of monolayer interfaces in Ga0.47In0.53As/InP multiple quantum wells grown by chemical beam epitaxy
| Autor: | A. P. Roth, R. Benzaquen, Richard Leonelli |
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| Rok vydání: | 1996 |
| Předmět: |
Diffraction
Materials science absorption spectra business.industry Multiple quantum epitaxy Analytical chemistry General Physics and Astronomy indium phosphides Tensile strain interface structure Chemical beam epitaxy Characterization (materials science) strains chemistry.chemical_compound quantum wells Arsine chemistry indium arsenides gallium arsenides Monolayer Optoelectronics photoluminescence business Ternary operation |
| Zdroj: | Journal of Applied Physics. 79:2640-2648 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.361134 |
| Popis: | We have carried out a detailed structural and optical characterization of Ga0.47In0.53As/InP multiple quantum wells grown by chemical beam epitaxy using a well-defined sequence of growth interruption times between successive layers. These growth interruption times result in the formation of interfacial layers which drastically alter the structural properties of Ga0.47In0.53As/InP multiple quantum wells. An analysis of double-crystal x-ray diffraction data reveals that exposure of InP to arsine for 2 s is sufficient to create approximately 3 monolayers of InAs0.55P0.45 ternary under biaxial compressive strain at the InP/Ga047In0.53As interface. Moreover, exposure of Ga0.47In0.53As to phosphine for 2 s results in the formation of approximately 2 monolayers of Ga0.48In0.52As0.21P0.79 quaternary under biaxial tensile strain at the Ga0.47In0.53As/InP interface. We find that long exposures to hydrides (over 5 s) rather than short ones give rise to interfacial layers with less compositional disorder and/or thickness fluctuation. Moreover, photoluminescence and absorption spectroscopy data reveal the negligible effect of InAsxP1−x and GaxIn1−xAsyP1−y interfacial layers on the emission and optical absorption properties of Ga0.47In0.53As/InP multiple quantum wells with sufficiently thick Ga0.47In0.53As layers |
| Databáze: | OpenAIRE |
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