Formation of intensive photoluminescence in porous silicon

Autor: O. I. Datsenko, O. V. Rudenko, M. S. Boltovets, V. A. Makara, O. V. Vakulenko
Předmět:
Zdroj: Scopus-Elsevier
Popis: Photoluminescence (PL) spectra of porous silicon (PS) samples are studied. Effect of mechanical stresses in substrate on PL intensity is shown. The quantum yield (QY) of PS luminescence is estimated by comparing PL spectra of PS and rhodamine 6G.
Databáze: OpenAIRE