Normally-Off Algan/Gan Mis-Hemt With Low Gate Leakage Current Using A Hydrofluoric Acid Pre-Treatment
| Autor: | Gokhan Kurt, Turkan Gamze Ulusoy Ghobadi, Sertaç Ural, Ekmel Ozbay, Ömer Ahmet Kayal, Mustafa Kemal Öztürk, Bayram Butun, Mehmet Kabak, Melisa Ekin Gulseren |
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| Přispěvatelé: | Kurt, Gökhan, Gülseren, Melisa Ekin, Ghobadi, Türkan Gamze Ulusoy, Ural, Sertaç, Kayal, Ömer Ahmet, Öztürk, Mustafa, Bütün, Bayram, Kabak, Mehmet, Özbay, Ekmel |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Gate dielectric Oxide 02 engineering and technology High-electron-mobility transistor Gate leakage current 01 natural sciences Normally-off GaN chemistry.chemical_compound Hydrofluoric acid X-ray photoelectron spectroscopy 0103 physical sciences Materials Chemistry Surface roughness Electrical and Electronic Engineering HEMT 010302 applied physics business.industry Hysteresis Pre-treatment 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Optoelectronics 0210 nano-technology business Layer (electronics) |
| Zdroj: | Solid-State Electronics |
| Popis: | We demonstrate the electrical performances of an AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) with low gate leakage current (Ig). A low gate leakage current as low as the order of 10−11 A/mm was achieved from normally-off MIS-HEMT device (Vth = 2.16 V) with a partially recessed gate, fluorine treatment, and ALD Al2O3 gate dielectric layer. The gate leakage current decrease is attributed to the pre-treatment of the gate region with hydrofluoric acid (HF) and deionized water (DI) solution, which acts to remove the native oxide layer and thus decrease interface traps. X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) analyses demonstrate that the AlGaN surfaces are modified such that the surface roughness and native oxide introduced by the treatments used to achieve normally-off operation are remedied with the use of the pre-treatment. |
| Databáze: | OpenAIRE |
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