Local lattice parameter determination of a silicon (001) layer grown on a sapphire (1102) substrate using convergent-beam electron diffraction

Autor:	Takayuki Akaogi, Michiyoshi Tanaka, Masami Terauchi, Kenji Tsuda
Rok vydání:	2006
Předmět:	Electron mobility Lattice constant Materials science Electron diffraction Condensed matter physics High Energy Physics::Lattice Nearly free electron model Sapphire Hexagonal lattice Crystal structure Anisotropy Instrumentation
Zdroj:	Journal of Electron Microscopy. 55:129-135
ISSN:	1477-9986 0022-0744
DOI:	10.1093/jmicro/dfl020
Popis:	All the six lattice parameters (a, b, c, alpha, beta and gamma) of a Si (001) layer grown on a sapphire (1102) substrate were determined by convergent-beam electron diffraction with no assumption of crystal lattice symmetry. A lattice compression in the Si (001) plane and an elongation in the [001] direction were revealed. An anisotropic lattice compression in the (001) plane was clearly detected for the first time. That is, the lattice compression in the Si [100] direction, which is parallel to the sapphire [1101] direction, was larger than that of the Si [010] direction, which is parallel to the sapphire [1120] direction. It was also revealed that the lattice parameters of the Si-layer depend on the distance from the interface. Anisotropy of carrier mobility was reasonably explained in terms of the anisotropy of the lattice parameters determined.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f4accf0b45f0e19ae448d662196be63 https://doi.org/10.1093/jmicro/dfl020 Zobrazit plný text záznamu