A Temperature-Dependent SiC MOSFET Modeling Method Based on MATLAB/Simulink
| Autor: | Dianguo Xu, Qiang Gao, Yijie Wang, Jin Miaoxin |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Transient state
General Computer Science Real-time computing Semiconductor device modeling 02 engineering and technology 01 natural sciences MATLAB/Simulink 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering SiC MOSFET General Materials Science Voltage source MATLAB computer.programming_language 010302 applied physics Physics 020208 electrical & electronic engineering Mathematical analysis General Engineering whole working region Current source Threshold voltage Dynamic simulation temperature-dependent model lcsh:Electrical engineering. Electronics. Nuclear engineering computer lcsh:TK1-9971 |
| Zdroj: | IEEE Access, Vol 6, Pp 4497-4505 (2018) |
| ISSN: | 2169-3536 |
| Popis: | In this paper, a modeling method based on MATLAB/Simulink for a temperature-dependent SiC MOSFET in the entire working region was proposed. Using a supplementary test circuit, the output characteristics of a device in the saturated region were extracted. Based on these characteristics, the model covered the output characteristics of the device in the whole working region. From the output curves, three main parameters essential for modeling were derived. Based on the Si lateral double-diffused MOSFET model, a temperature-dependent static model of SCT20N120 was established by adding a temperature-dependent compensation voltage source to simulate the temperature characteristics of the threshold voltage and a temperature-dependent compensation current source to compensate for the drain current error in the linear region due to the differences in structure and material between Si and SiC. In addition, based on the gate equivalent circuit, the dynamic model of the target device was established. The temperature-dependent static simulation results could simulate the actual measured values well. Furthermore, based on the comparison between the dynamic simulation results involving the device’s turn-ON and turn-OFF process losses and the actual transient state losses derived from a double-pulse test under the conditions of $V_{\mathrm{ ds}}=300$ V, $I_{d}=15$ A, $R_{g\_{}exton}=18\,\,\Omega $ , and $R_{g\_{}extoff}=12\,\,\Omega $ at 200 °C, the maximum error was 6.7%. |
| Databáze: | OpenAIRE |
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