Lateral positioning of InGaAs quantum dots using a buried stressor
| Autor: | U. W. Pohl, Sven Rodt, Dieter Bimberg, André Strittmatter, A. Dreismann, Andrei Schliwa, Axel Hoffmann, Irina A. Ostapenko, V. A. Haisler, E. Stock, Jan-Hindrik Schulze, W. Unrau, O. Hitzemann, T. D. Germann |
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| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
statistical mechanics models
optical properties Materials science Physics and Astronomy (miscellaneous) Nucleation surface strains Epitaxy Gallium arsenide P-N junctions chemistry.chemical_compound Etching (microfabrication) chemical elements etching ddc:530 Emission spectrum Lithography business.industry epitaxy 530 Physik free energy chemistry Quantum dot oxides microscopy Optoelectronics business Electron-beam lithography |
| Popis: | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 100, 093111 (2012) and may be found at https://doi.org/10.1063/1.3691251. We present a ���bottom-up��� approach for the lateral alignment of semiconductor quantum dots (QDs) based on strain-driven self-organization. A buried stressor formed by partial oxidation of (Al,Ga)As layers is employed in order to create a locally varying strain field at a GaAs(001) growth surface. During subsequent strained layer growth, local self-organization of (In,Ga)As QDs is controlled by the contour shape of the stressor. Large vertical separation of the QD growth plane from the buried stressor interface of 150 nm is achieved enabling high optical quality of QDs. Optical characterization confirms narrow QD emission lines without spectral diffusion. |
| Databáze: | OpenAIRE |
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