Impact of roughness of TiN bottom electrode on the forming voltage of HfO2 based resistive memories
| Autor: | M. Bonvalot, S. Martinie, R. Sommer, Ph. Blaise, E. Nowak, Christelle Charpin-Nicolle, S. Belahcen, M.L. Cordeau, E. Jalaguier, S. Bernasconi, B. Eychenne, A. Persico |
|---|---|
| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), European Project: 783176,WAKeMeUp |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Oxide chemistry.chemical_element 02 engineering and technology Surface finish 01 natural sciences chemistry.chemical_compound Memory 0103 physical sciences Electrical and Electronic Engineering [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ComputingMilieux_MISCELLANEOUS 010302 applied physics [PHYS]Physics [physics] Resistive touchscreen business.industry Reactive ion Etching Plasma 021001 nanoscience & nanotechnology Condensed Matter Physics Roughness Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Resistive random-access memory chemistry Key-words -RRAM Electrode Optoelectronics Forming Voltage 0210 nano-technology business Tin OXRAM Voltage |
| Zdroj: | Microelectronic Engineering Microelectronic Engineering, Elsevier, 2020, 221, pp.111194. ⟨10.1016/j.mee.2019.111194⟩ Microelectronic Engineering, 2020, 221, pp.111194. ⟨10.1016/j.mee.2019.111194⟩ |
| ISSN: | 0167-9317 1873-5568 |
| DOI: | 10.1016/j.mee.2019.111194 |
| Popis: | International audience; In this work, we study the impact of roughness of TiN bottom electrode on the forming voltage of 1R TiN/HfO$_2$/Ti/TiN based ReRAM devices. A novel and atypical strategy is proposed to induce a controlled roughness of the bottom electrode, using various plasma chemistries. The forming voltage is observed to be directly linked to the roughness of the bottom electrode, over a large range of roughness values. TCAD simulation studies enable an estimate of the electrical field in the oxide inducing the forming step and confirm the dominant impact of roughness on the switching properties of ReRAM devices. |
| Databáze: | OpenAIRE |
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