The occupied electronic structure of ultrathin boron doped diamond
| Autor: | Philip Hofmann, Richard B. Jackman, Fabian Arnold, Ann Julie Holt, Alexander C. Pakpour-Tabrizi, James E. Butler, A. L. Vikharev, Federico Mazzola, Marco Bianchi, Jill A. Miwa, Sanjoy K. Mahatha, Alex Schenk, S. P. Cooil, Justin W. Wells |
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| Přispěvatelé: | University of St Andrews. School of Physics and Astronomy, University of St Andrews. Centre for Designer Quantum Materials |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
SURFACE NDAS CONFINEMENT Bioengineering 02 engineering and technology Electronic structure engineering.material 01 natural sciences Settore FIS/03 - Fisica della Materia ACCEPTOR Condensed Matter::Materials Science Effective mass (solid-state physics) X-ray photoelectron spectroscopy Condensed Matter::Superconductivity 0103 physical sciences QD General Materials Science SI 010306 general physics Electronic band structure Quantum Nanoscopic scale QC business.industry SUPERCONDUCTIVITY Settore FIS/01 - Fisica Sperimentale General Engineering Diamond General Chemistry QD Chemistry 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics QC Physics Quantum dot engineering Optoelectronics BANDS 0210 nano-technology business INTERFACES |
| Zdroj: | Pakpour-Tabrizi, A C, Schenk, A K, Holt, A J U, Mahatha, S K, Arnold, F, Bianchi, M, Jackman, R B, Butler, J E, Vikharev, A, Miwa, J A, Hofmann, P, Cooil, S P, Wells, J W & Mazzola, F 2020, ' The occupied electronic structure of ultrathin boron doped diamond ', Nanoscale Advances, vol. 2, no. 3, pp. 1358-1364 . https://doi.org/10.1039/c9na00593e Nanoscale Advances |
| ISSN: | 2516-0230 4002-0002 |
| DOI: | 10.1039/c9na00593e |
| Popis: | Funding: RBJ acknowledges the UK's Engineering and Physical Sciences Research Council (EPSRC) for partial funding for this activity (EP/H020055/1) as well as The EC's Horizon 2020 Programme for support from the “GREENDIAMOND” project (ID: 640947). This work was supported by the Research Council of Norway through its Centres of Excellence funding scheme, Project No. 262633, “QuSpin”, and through the Fripro program, Project No. 250985 “FunTopoMat” and 262339 “NEAT”. This work was supported by the Danish Council for Independent Research, Natural Sciences under the Sapere Aude program (Grants No. DFF-4002-00029 and DFF-6108-00409) and by VILLUM FONDEN via the Centre of Excellence for Dirac Materials (Grant No. 11744) and the Aarhus University Research Foundation. Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement. Publisher PDF |
| Databáze: | OpenAIRE |
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