Silicon-based PIN SPST RF switches for improved linearity

Autor:	Deukhyoun Heo, Parag Upadhyaya, Essam Mina, Pinping Sun, DongHo Jeong, Peng Liu
Rok vydání:	2010
Předmět:	Materials science business.industry PIN diode Electrical engineering Linearity Silicon-germanium law.invention chemistry.chemical_compound RF switch chemistry law Optoelectronics Insertion loss Radio frequency business Monolithic microwave integrated circuit Diode
Zdroj:	2010 IEEE MTT-S International Microwave Symposium.
Popis:	Analysis of PIN diode's geometric effects on the performance of RF switches is presented with measured data. The impact of periphery-to-area ratio (P/A) is investigated in terms of forward bias resistance and linearity. Theoretical analysis shows the smaller periphery-to-area ratio of PIN diode can reduce not only the forward biased resistance, but also the power handling capability. In addition, positive bias to the PIN diode's cathode terminal can reduce the effects of Psub-Nwell parasitic diodes, leading to enhanced linearity. Fabricated in a standard 0.18-µm SiGe BiCMOS technology, the 50 µm2 PIN Single-pole-single-throw (SPST) RF switch MMIC can achieve an insertion loss of less than 0.69 dB from 2 to 18 GHz with the measured P 1dB of 16 dBm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e9085b8fe53e0bcba24b5c80268b3fb https://doi.org/10.1109/mwsym.2010.5518266 Zobrazit plný text záznamu