High-Performance InGaAs HEMTs on Si Substrates for RF Applications
| Autor: | Bo Wang, Yanfu Wang, Ruize Feng, Haomiao Wei, Shurui Cao, Tong Liu, Xiaoyu Liu, Haiou Li, Peng Ding, Zhi Jin |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: |
current gain cutoff frequency (fT)
InGaAs HEMTs Si substrates wafer bonding maximum extrinsic transconductance (gm max) TK7800-8360 Computer Networks and Communications MathematicsofComputing_GENERAL TheoryofComputation_MATHEMATICALLOGICANDFORMALLANGUAGES Hardware and Architecture Control and Systems Engineering Signal Processing Electrical and Electronic Engineering Electronics |
| Zdroj: | Electronics, Vol 11, Iss 259, p 259 (2022) Electronics; Volume 11; Issue 2; Pages: 259 |
| ISSN: | 2079-9292 |
| Popis: | In this paper, we have fabricated InGaAs high-electron-mobility transistors (HEMTs) on Si substrates. The InAlAs/InGaAs heterostructures were initially grown on InP substrates by molecular beam epitaxy (MBE), and the adhesive wafer bonding technique was employed to bond the InP substrates to Si substrates, thereby forming high-quality InGaAs channel on Si. The 120 nm gate length device shows a maximum drain current (ID,max) of 569 mA/mm, and the maximum extrinsic transconductance (gm,max) of 1112 mS/mm. The current gain cutoff frequency (fT) is as high as 273 GHz and the maximum oscillation frequency (fMAX) reaches 290 GHz. To the best of our knowledge, the gm,max and the fT of our device are the highest ever reported in InGaAs channel HEMTs on Si substrates at given gate length above 100 nm. |
| Databáze: | OpenAIRE |
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