Characterization of CdTe growth on GaAs using different etching techniques
| Autor: | Elif Bilgilisoy, Selin Özden, Emine Bakali, Yusuf Selamet, Merve Karakaya |
|---|---|
| Přispěvatelé: | TR246463, Bilgilisoy, Elif, Özden, Selin, Bakali, Emine, Karakaya, Merve, Selamet, Yusuf, Izmir Institute of Technology. Physics |
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Raman mapping Scanning electron microscope Analytical chemistry Etch pit density Condensed Matter Physics Isotropic etching Cadmium telluride photovoltaics Electronic Optical and Magnetic Materials Crystal Crystallography Defect decoration etching Etching (microfabrication) Materials Chemistry Cadmium telluride Electrical and Electronic Engineering Dislocation Molecular beam epitaxy |
| Popis: | CdTe buffer layers which were grown on (211)B GaAs by molecular beam epitaxy were subjected to two different etch treatments to quantify the crystal quality and dislocation density. The optical properties and thicknesses of the samples were obtained by ex situ spectroscopic ellipsometry. The surface morphologies of the CdTe epilayers were analyzed by atomic force microscopy, scanning electron microscopy, and Nomarski microscopy before and after chemical etching. We compare the triangle- and trapezoid-shaped etch pits due to the Everson and Nakagawa etch solutions, respectively. Measured etch pit density (EPD) values of triangle etch pits were found in the 8 × 107 cm−2 to 2 × 108 cm−2 range, and trapezoid-shaped etch pits were found in the 1 × 107 cm−2 to 7 × 107 cm−2 range for samples with thicknesses Gediz Project at Izmir Institute of Technology |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|