Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses
| Autor: | Eric Pop, Mario Lanza, Kin Leong Pey, Yuanyuan Shi, H-S Philip Wong, Chengbin Pan, Victoria Chen, Nagarajan Raghavan, Francesco Maria Puglisi |
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| Rok vydání: | 2017 |
| Předmět: |
Materials Chemistry2506 Metals and Alloys
Fabrication Materials science Oxide Hexagonal boron nitride 02 engineering and technology Plasticity 010402 general chemistry 01 natural sciences Stress (mechanics) chemistry.chemical_compound Electronic Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering Transition metal Electronic Optical and Magnetic Materials business.industry 021001 nanoscience & nanotechnology 0104 chemical sciences chemistry Resistive switching Optoelectronics 0210 nano-technology business Layer (electronics) |
| Zdroj: | 2017 IEEE International Electron Devices Meeting (IEDM). |
| Popis: | We present the first fabrication of electronic synapses using two dimensional (2D) hexagonal boron nitride (A-BN) as active switching layer. The main advantage of these devices compared to the transition metal oxide (TMO) based counterparts is that multilayer A-BN stacks show both volatile and non-volatile resistive switching (RS) depending on the programming stresses applied, which allows implementing short-term (STP) and long-term plasticity (LTP) rules using a single device and without the need of complex architectures. |
| Databáze: | OpenAIRE |
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