Powder Pressed Cuprous Iodide (CuI) as A Hole Transporting Material for Perovskite Solar Cells
Autor: | Thanihaichelvan Murugathas, Siva Uthayaraj, D. G. B. C. Karunarathne, Punniamoorthy Ravirajan, G.R.R.A. Kumara, Shivatharsiny Rasalingam, Dhayalan Velauthapillai, R.M.G. Rajapakse |
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Jazyk: | angličtina |
Rok vydání: | 2019 |
Předmět: |
Materials science
Iodide hole-transporting material Air mass (solar energy) perovskite solar cells powder pressing lcsh:Technology Article cuprous iodide Surface roughness General Materials Science lcsh:Microscopy Perovskite (structure) lcsh:QC120-168.85 chemistry.chemical_classification Pressing spiro-OMeTAD air stable lcsh:QH201-278.5 business.industry lcsh:T Energy conversion efficiency CuI chemistry lcsh:TA1-2040 Optoelectronics lcsh:Descriptive and experimental mechanics lcsh:Electrical engineering. Electronics. Nuclear engineering business lcsh:Engineering (General). Civil engineering (General) Layer (electronics) Current density lcsh:TK1-9971 |
Zdroj: | Materials, Vol 12, Iss 13, p 2037 (2019) Materials Volume 12 Issue 13 |
ISSN: | 1996-1944 |
Popis: | This study focuses on employing cuprous iodide (CuI) as a hole-transporting material (HTM) in fabricating highly efficient perovskite solar cells (PSCs). The PSCs were made in air with either CuI or 2,2&prime 7,7&prime Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9&prime spirobifluorene (spiro-OMeTAD) as HTMs. A simple and novel pressing method was employed for incorporating CuI powder layer between perovskite layer and Pt top-contact to fabricate devices with CuI, while spiro-OMeTAD was spin-coated between perovskite layer and thermally evaporated Au top-contact to fabricate devices with spiro-OMeTAD. Under illuminations of 100 mW/cm2 with an air mass (AM) 1.5 filter in air, the average short-circuit current density (JSC) of the CuI devices was over 24 mA/cm2, which is marginally higher than that of spiro-OMeTAD devices. Higher JSC of the CuI devices can be attributed to high hole-mobility of CuI that minimizes the electron-hole recombination. However, the average power conversion efficiency (PCE) of the CuI devices were lower than that of spiro-OMeTAD devices due to slightly lower open-circuit voltage (VOC) and fill factor (FF). This is probably due to surface roughness of CuI powder. However, optimized devices with solvent-free powder pressed CuI as HTM show a promising efficiency of over 8.0 % under illuminations of 1 sun (100 mW/cm2) with an air mass 1.5 filter in air, which is the highest among the reported efficiency values for PSCs fabricated in an open environment with CuI as HTM. |
Databáze: | OpenAIRE |
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