Tellurium and sulfur doped GaSe for mid-IR applications

Autor: Zhi-Shu Feng, V. Atuchin, J. Y. Gao, Yu. M. Andreev, Zhi-Hui Kang, Jin Guo, Jijiang Xie, G. Lanskii, Lei Zhang, A. Shaiduko
Přispěvatelé: Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ
Rok vydání: 2012
Předmět:
Zdroj: Applied physics B: Lasers and optics. 2012. Vol. 108, № 3. P. 545-552
ISSN: 1432-0649
0946-2171
DOI: 10.1007/s00340-012-5067-9
Popis: Centimeter-sized Te:GaSe (≤10 mass%) ingots have been grown by the vertical Bridgman technique and studied to reveal the potentials for phase matching and frequency conversion. Less than 5 mass% Te-doped crystals show the hexagonal structure like e-GaSe. Te:GaSe (≤2 mass%) crystals were suitable for non-linear applications. The optimal Te-doping level between 0.1 and 0.5 mass% has been clearly observed in CO2 laser SHG experiment. The CO2 laser SHG efficiency in Te:GaSe (0.1–0.5 mass%) is ∼20 % higher than that of GaSe due to better optical quality. Phase matching conditions in Te-doped crystals have been shown to be identical with those of GaSe.
Databáze: OpenAIRE