Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations
| Autor: | Kian Hua Tan, Wan Khai Loke, Bo Wen Jia, Soon Fatt Yoon, Satrio Wicaksono |
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| Přispěvatelé: | School of Electrical and Electronic Engineering |
| Rok vydání: | 2015 |
| Předmět: |
Electron mobility
Materials science Condensed matter physics Mechanical Engineering Substrate (electronics) Condensed Matter Physics Epitaxy Root mean square Crystallography Mechanics of Materials Transmission electron microscopy TEM General Materials Science Thin film Dislocation Epitaxial Growth Molecular beam epitaxy |
| Zdroj: | Materials Letters. 158:258-261 |
| ISSN: | 0167-577X |
| DOI: | 10.1016/j.matlet.2015.05.123 |
| Popis: | We report a fully relaxed low threading dislocation density InSb layer grown on a GaAs substrate using self-assembled periodic interfacial misfit dislocations. The InSb layer was grown at 310°C by molecular beam epitaxy. The AFM measurement exhibited a root mean square (r.m.s.) roughness of 1.1 nm. ω-2θ scan results from x-ray diffraction measurement indicated that the InSb layer is 98.9% relaxed. Images from the transmission electron microscope measurement showed a threading dislocation density of 1.38×108 cm-2. The formation of highly uniform interfacial misfit dislocation array was also observed and the separation of dislocations is consistent with theoretical calculation. The InSb layer exhibited a 33,840 cm2/V s room temperature electron mobility. NRF (Natl Research Foundation, S’pore) Accepted version |
| Databáze: | OpenAIRE |
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