Optically active Er(3+) ions in SiO(2) codoped with Si nanoclusters
Autor: | Alessandro Pitanti, Nicola Daldosso, Fabrice Gourbilleau, Lorenzo Pavesi, Khalil Hijazi, Larysa Khomenkova, Julien Cardin, Olivier Jambois, Daniel Navarro-Urrios, Y. Lebour, Richard Rizk, B. Garrido |
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Přispěvatelé: | Laboratorio di Nanoscienze, Dipartimento di Fisica, Universita di Trento, Departament d'Electronica (MIND-IN2UB), Universitat de Barcelona (UB), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Università degli Studi di Trento (UNITN), Micronanotecnologies i nanoscòpies per dispositius electrònics i fotònics [Spain] (LENS, MIND-IN2UB), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Universitat de Barcelona |
Jazyk: | angličtina |
Rok vydání: | 2009 |
Předmět: |
Materials science
Silicon Population Cristal·lografia Analytical chemistry Condensed matter General Physics and Astronomy chemistry.chemical_element 02 engineering and technology 01 natural sciences 7. Clean energy Nanoclusters Ion Erbium 0103 physical sciences 010306 general physics Silicon oxide education Spectroscopy Optical amplifier education.field_of_study Crystallography Optical properties Espectroscòpia 021001 nanoscience & nanotechnology Matèria condensada Secondary ion mass spectrometry chemistry Silicon nanocrystals Waveguides [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic 0210 nano-technology |
Zdroj: | Journal of Applied Physics Journal of Applied Physics, American Institute of Physics, 2009, 106, pp.093107 Journal of Applied Physics, American Institute of Physics, 2009, 106 (9), pp.093107. ⟨10.1063/1.3253753⟩ Dipòsit Digital de la UB Universidad de Barcelona Journal of Applied Physics, 2009, 106, pp.093107 Journal of Applied Physics, 2009, 106 (9), pp.093107. ⟨10.1063/1.3253753⟩ Università degli di Trento-IRIS Recercat. Dipósit de la Recerca de Catalunya instname HAL |
ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.3253753⟩ |
Popis: | International audience; Optical properties of directly excited erbium (Er3+) ions have been studied in silicon rich silicon oxide materials codoped with Er3+. The spectral dependence of the direct excitation cross section (σdir) of the Er3+ atomic 4I152→4I112 transition (around 0.98 μm) has been measured by time resolved µ-photoluminescence measurements. We have determined that σdir is 9.0±1.5 x10−21 cm2 at 983 nm, at least twice larger than the value determined on a stoichiometric SiO2 matrix. This result, in combination with a measurement of the population of excited Er3+ as a function of the pumping flux, has allowed quantifying accurately the amount of optically active Er3+. This concentration is, in the best of the cases, 26% of the total Er population measured by secondary ion mass spectrometry, which means that only this percentage could provide optical gain in an eventual optical amplifier based on this material. |
Databáze: | OpenAIRE |
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