Analysis of Flicker Noise for Improved Data Retention Characteristics in Silicon-Oxide-High-k-Oxide-Silicon Flash Memory Using N2 Implantation
| Autor: | Ga-Won Lee, Soo-In Lee, Y. M. Kim, Hui-Jun Yun, Hi-Deok Lee, Kwang-Seok Jeong, Seung-Dong Yang, Jong-Suk Oh |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Silicon Biomedical Engineering Oxide chemistry.chemical_element Bioengineering Flash memory chemistry.chemical_compound Materials Testing Rectangular potential barrier General Materials Science Flicker noise Silicon oxide Leakage (electronics) High-κ dielectric Computer Storage Devices business.industry Equipment Design General Chemistry Silicon Dioxide Condensed Matter Physics Nanostructures Equipment Failure Analysis Semiconductors chemistry Optoelectronics business |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 13:3331-3334 |
| ISSN: | 1533-4880 |
| DOI: | 10.1166/jnn.2013.7294 |
| Popis: | In this paper, we fabricate planar-type Silicon-Oxide-High-k-Oxide-Silicon (SOHOS) and the planar-type SOHOS devices with N2 implantation of 3 x 10(15) dose in a tunneling oxide to determine the impact of N2 implantation in the tunneling oxide of a memory device. The N2 implantation device has better retention characteristics than the device with no implantation. In order establish the correlation between N2 implantation and retention characteristic improvement, the low frequency noise (1/f noise) characteristic is investigated. The normalized drain current noise (S(ID)/I(D)2) level of the N2 implantation device is higher than that of the device with no implantation, which means that N2 implantation causes more trap formation near the interface. Considering that N2 implantation does not affect the DC transfer characteristics, such as mobility and sub-threshold slope, this finding indicates that the increase in the 1/f noise level is due to oxide traps rather than to interface traps. Therefore, the retention characteristic improvement in the N2 implantation device can be explained by the generation of higher number of oxide traps and an increase in the potential barrier blocking the leakage path in the tunneling oxide. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|