Electric field and plasma effects on proton-irradiated GaAs detector performance

Autor:	U. Biggeri, P. Vanni, Giuseppe Bertuccio, C. Lanzieri, Filippo Nava, Ettore Vittone, Claudio Canali
Rok vydání:	1998
Předmět:	Physics Nuclear and High Energy Physics Energy loss Proton Physics::Instrumentation and Detectors business.industry GaAs Detector IBIC electronic characterization Charge (physics) Plasma Electric field Optoelectronics Charge carrier Irradiation business Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 410:68-73
ISSN:	0168-9002
DOI:	10.1016/s0168-9002(98)00144-2
Popis:	The effect of the bulk damage on the detector performance was determined as a function of the non-ionising energy loss of high-energy protons in semi-insulating GaAs. The study was performed by measuring the charge collection efficiency of γ-rays, protons, β- and α-particles on 24 GeV/c proton irradiated detectors fabricated on Liquid Encapsulated Czochralski grown GaAs. The results obtained let us explain the effect of the electric field strength and the plasma on the collection of the charge carriers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d3fc045506141e987ca5805ba4cff92 https://doi.org/10.1016/s0168-9002(98)00144-2 Zobrazit plný text záznamu Full Text from ScienceDirect