Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography
| Autor: | Martin Ledinský, Antonín Fejfar, Philipp Löper, Gizem Nogay, Matěj Hývl, Franz-Josef Haug, Quentin Jeangros, Christophe Ballif |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
microcrystalline silicon Passivation Annealing (metallurgy) 02 engineering and technology silicon solar cell scalpel c-afm passivating contact 01 natural sciences resistance poly-si c-afm tomography 0103 physical sciences General Materials Science Wafer Silicon oxide 010302 applied physics charge-carrier transport carrier transport business.industry temperature Conductive atomic force microscopy 021001 nanoscience & nanotechnology Amorphous solid Transmission electron microscopy microscopy cells Optoelectronics layers 0210 nano-technology business Layer (electronics) |
| Zdroj: | ACS Applied Materials & Interfaces. 13:9994-10000 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.0c21282 |
| Popis: | We investigate hole-selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx(p). The fabrication process of these contacts involves an annealing step at temperatures above 750 degrees C which crystallizes the initially amorphous layer and diffuses dopants across the interfacial oxide into the wafer to facilitate charge transport, but it can also disrupt the SiOx layer necessary for wafer-surface passivation. To investigate the transport mechanism of the charge carriers through the selective contact and its changes during the annealing process, we utilize various characterization methods, such as transmission electron microscopy, micro Raman spectroscopy, and conductive atomic force microscopy. Combining the latter with a sequential removal of material, we assemble a tomographic reconstruction of the crystallized layer that reveals the presence of preferential vertical transport channels. |
| Databáze: | OpenAIRE |
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