High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach
| Autor: | Jae Seok Hur, Min Jae Kim, Seong Hun Yoon, Hagyoung Choi, Chi Kwon Park, Seung Hee Lee, Min Hee Cho, Bong Jin Kuh, Jae Kyeong Jeong |
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| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | ACS Applied Materials & Interfaces. 14:48857-48867 |
| ISSN: | 1944-8252 1944-8244 |
| Popis: | In this paper, the feasibility of an indium-gallium oxide (In |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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