Study of passivation defects by electroluminescence in AlGaN/GaN HEMTs on SiC
| Autor: | Jean-Claude Clement, Nathalie Malbert, Gerard Pataut, Dominique Carisetti, Michel Bonnet, Moshine Bouya, Nathalie Labat, Philippe Perdu |
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| Přispěvatelé: | Labat, Nathalie |
| Jazyk: | angličtina |
| Rok vydání: | 2007 |
| Předmět: |
Materials science
Passivation business.industry [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Algan gan High-electron-mobility transistor Electroluminescence Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Semiconductor Electric field Optoelectronics Light emission Electrical and Electronic Engineering Safety Risk Reliability and Quality business |
| Popis: | This paper presents a new method of passivation control by electroluminescence (EL) in 0.15 μm AlGaN/GaN HEMT. The electroluminescence signature in one finger HEMTs (W = 1 × 100 μm), and eight fingers ones (W = 8 × 125 μm), is modified by defects located at the passivation/semiconductor interface and is characterized by a light emission along the drain contact. This abnormal emission reveals some modification of the electric field distribution in the gate-drain space probably induced by traps located at the passivation/semiconductor interface. These traps contribute to the creation of a virtual gate in the gate-drain space. |
| Databáze: | OpenAIRE |
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