Fully differential cryogenic transistor amplifier
| Autor: | Nikolai Beev, Mikko Kiviranta |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
010302 applied physics
Physics FET amplifier business.industry low-noice apmplifier General Physics and Astronomy Common source SQUID readout 01 natural sciences 7. Clean energy Fully differential amplifier law.invention SIGe transistors law Operational transconductance amplifier 0103 physical sciences Operational amplifier Linear amplifier Optoelectronics General Materials Science Instrumentation amplifier 010306 general physics business Direct-coupled amplifier |
| Zdroj: | Cryogenics Beev, N & Kiviranta, M 2013, ' Fully differential cryogenic transistor amplifier ', Cryogenics, vol. 57, pp. 129-133 . https://doi.org/10.1016/j.cryogenics.2013.06.004 |
| ISSN: | 1879-2235 0011-2275 |
| Popis: | We have constructed a dc-coupled differential amplifier capable of operating in the 4.2 K–300 K temperature range. The amplifier can be operated at high-bias setting, where it dissipates 5 mW, has noise temperature TN ≈ 0.7 K at RS ≈ 5 kΩ and >40 MHz bandwidth at 4.2 K bath temperature. The bias setting can be adjusted: at our lowest tested setting the amplifier dissipates 2 MHz bandwidth. The 1/f noise corner frequency is a few times 10 kHz. We foresee the amplifier to have an application in the readout of Superconducting Quantum Interference Devices (SQUIDs), Superconducting Tunnel Junction Detectors (STJs) and Transition Edge Sensors (TESes). We have verified the practical use of the amplifier by reading out a 4.2 K 480-SQUID array with 40 MHz bandwidth and |
| Databáze: | OpenAIRE |
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