Analysis and Simulation of Forcing the Limits of Thermal Sensing for Microbolometers in CMOS–MEMS Technology
| Autor: | Fikri Serdar Gokhan, Hasan Goktas |
|---|---|
| Přispěvatelé: | ALKÜ, 0-belirlenecek |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Fabrication
Materials science thermal detector Multiphysics lcsh:Mechanical engineering and machinery temperature sensor high sensitivity Article microbolometer Night vision Thermal lcsh:TJ1-1570 microresonator Electrical and Electronic Engineering clamped-clamped beam Microelectromechanical systems business.industry complementary metal-oxide semiconductor (CMOS) Mechanical Engineering Microbolometer Solver MEMS Control and Systems Engineering infrared sensor Optoelectronics clamped–clamped beam business Joule heating |
| Zdroj: | Micromachines Volume 10 Issue 11 Micromachines, Vol 10, Iss 11, p 733 (2019) |
| ISSN: | 2072-666X |
| DOI: | 10.3390/mi10110733 |
| Popis: | Room-temperature highly sensitive microbolometers are becoming very attractive in infrared (IR) sensing with the increase in demand for the internet of things (IOT), night vision, and medical imaging. Different techniques, such as building extremely small-scale devices (nanotubes, etc.) or using 2D materials, showed promising results in terms of high sensitivity with the cost of challenges in fabrication and low-noise readout circuit. Here, we propose a new and simple technique on the application of joule heating on a clamped&ndash clamped beam without adding any complexity. It provides much better uniformity in temperature distribution in comparison to conventional joule heating, and this results in higher thermal stresses on fixed ends. This consequently brings around 60.5× improvement in the overall temperature sensitivity according to both theory and COMSOL (multiphysics solver). The sensitivity increased with the increase in the stiffness constant, and it was calculated as 134 N/m for a device with a 60.5× improvement. A considerable amount of decrease in the operation temperature (36× below 383 K and 47× below 428 K) was achieved via a new technique. That&rsquo s why the proposed solution can be used either to build highly reliable long-term devices or to increase the thermal sensitivity. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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