A 250 mV Cu/SiO2/W Memristor with Half-Integer Quantum Conductance States
| Autor: | Marie Minvielle, S. R. Nandakumar, Bipin Rajendran, S. Nagar, Catherine Dubourdieu |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Point Contacts Evolution Resistance Transport Bioengineering Nanotechnology 02 engineering and technology Memristor 01 natural sciences Resistive Switching law.invention Protein filament Filamentary Conduction Tungsten-Oxide law 0103 physical sciences Quantized Conductance Devices General Materials Science Sio2 Nanoscopic scale Cu 010302 applied physics Quantum conductance Condensed matter physics Cu-Doped Sio2 Mechanical Engineering Half-Integer Quantization Nanoelectronics Conductance General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Constriction Non-volatile memory Resistive Switching Memories Half-integer 0210 nano-technology |
| Zdroj: | IndraStra Global. |
| ISSN: | 2381-3652 |
| DOI: | 10.1021/acs.nanolett.5b04296 |
| Popis: | Memristive devices, whose conductance depends on previous programming history, are of significant interest for building nonvolatile memory and brain-inspired computing systems. Here, we report half-integer quantized conductance transitions G = (n/2) (2e(2)/h) for n = 1, 2, 3, etc., in Cu/SiO2/W memristive devices observed below 300 mV at room temperature. This is attributed to the nanoscale filamentary nature of Cu conductance pathways formed inside SiO2. Retention measurements also show spontaneous filament decay with quantized conductance levels. Numerical simulations shed light into the dynamics underlying the data retention loss mechanisms and provide new insights into the nanoscale physics of memristive devices and trade-offs involved in engineering them for computational applications. |
| Databáze: | OpenAIRE |
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