Improvement of the electrical performance of Au/Ti/HfO 2 /Ge 0.9 Sn 0.1 p-MOS capacitors by using interfacial layers
| Autor: | Bernard Pelissier, M. A. Mahjoub, Bassem Salem, Franck Bassani, J.M. Hartmann, Gerard Ghibaudo, Sébastien Labau, Thibault Haffner, J. Aubin, Sylvain David |
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| Přispěvatelé: | Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA) |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) chemistry.chemical_element Germanium 02 engineering and technology 01 natural sciences 7. Clean energy law.invention [SPI]Engineering Sciences [physics] X-ray photoelectron spectroscopy law 0103 physical sciences [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] Deposition (law) 010302 applied physics business.industry Plasma 021001 nanoscience & nanotechnology Capacitor CMOS chemistry Optoelectronics 0210 nano-technology business Tin Layer (electronics) |
| Zdroj: | Applied Physics Letters Applied Physics Letters, 2019, 115 (17), pp.171601. ⟨10.1063/1.5121474⟩ Applied Physics Letters, American Institute of Physics, 2019, 115 (17), pp.171601. ⟨10.1063/1.5121474⟩ |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.5121474⟩ |
| Popis: | The impact of different interfacial layers (ILs) on the electrical performances of Au/Ti/HfO2/Ge0.9Sn0.1 metal oxide semiconductor (MOS) capacitors is studied. Parallel angle resolved x-ray photoelectron spectroscopy measurements show that germanium diffuses into the HfO2 layer when no IL is used. This results in an increase in the tin content at the interface and a high interface state density. We demonstrate that the use of an IL prevents germanium and HfO2 intermixing and improves the electrical performance of MOS capacitors. Several ILs are studied such as alumina (Al2O3) and plasma oxidized GeSn (GeSnOx) prior to HfO2 deposition. C–V measurements correlated with simulations made by a customized analytical model indicate an interface state density of 5 × 1011 eV−1 cm−2 for the HfO2/GeSnOx/Ge0.9Sn0.1 gate stack. This result is promising for the integration of high mobility GeSn channels in CMOS devices.The impact of different interfacial layers (ILs) on the electrical performances of Au/Ti/HfO2/Ge0.9Sn0.1 metal oxide semiconductor (MOS) capacitors is studied. Parallel angle resolved x-ray photoelectron spectroscopy measurements show that germanium diffuses into the HfO2 layer when no IL is used. This results in an increase in the tin content at the interface and a high interface state density. We demonstrate that the use of an IL prevents germanium and HfO2 intermixing and improves the electrical performance of MOS capacitors. Several ILs are studied such as alumina (Al2O3) and plasma oxidized GeSn (GeSnOx) prior to HfO2 deposition. C–V measurements correlated with simulations made by a customized analytical model indicate an interface state density of 5 × 1011 eV−1 cm−2 for the HfO2/GeSnOx/Ge0.9Sn0.1 gate stack. This result is promising for the integration of high mobility GeSn channels in CMOS devices. |
| Databáze: | OpenAIRE |
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