Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode
| Autor: | Yudan Zhao, Xiaoyang Xiao, Jiaping Wang, Tianfu Zhang, Kaili Jiang, Yujia Huo, Qunqing Li, Wang Ying-Cheng, Shoushan Fan |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Ambipolar diffusion business.industry Schottky barrier Contact resistance Transistor Schottky diode 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Metal–semiconductor junction 01 natural sciences 0104 chemical sciences law.invention Semiconductor law Optoelectronics General Materials Science 0210 nano-technology business Diode |
| Zdroj: | ACS applied materialsinterfaces. 9(22) |
| ISSN: | 1944-8252 |
| Popis: | We have fabricated carbon nanotube and MoS2 field-effect transistors with asymmetric contact forms of source–drain electrodes, from which we found the current directionality of the devices and different contact resistances under the two current directions. By designing various structures, we can conclude that the asymmetric electrical performance was caused by the difference in the effective Schottky barrier height (ΦSB) caused by the different contact forms. A detailed temperature-dependent study was used to extract and compare the ΦSB for both contact forms of CNT and MoS2 devices; we found that the ΦSB for the metal-on-semiconductor form was much lower than that of the semiconductor-on-metal form and is suitable for all p-type, n-type, or ambipolar semiconductors. This conclusion is meaningful with respect to the design and application of nanomaterial electronic devices. Additionally, using the difference in barrier height caused by the contact forms, we have also proposed and fabricated Schottky barri... |
| Databáze: | OpenAIRE |
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