Proximity-induced superconductivity in all-silicon superconductor /normal-metal junctions
Autor: | F. Lefloch, F. Chiodi, Dominique Débarre, Christophe Marcenat, J. E. Duvauchelle |
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Přispěvatelé: | Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay |
Jazyk: | angličtina |
Rok vydání: | 2017 |
Předmět: |
Superconductivity
Materials science Condensed matter physics Dopant Type-I superconductor Doping Fermi energy 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Coherence length [PHYS.COND.CM-S]Physics [physics]/Condensed Matter [cond-mat]/Superconductivity [cond-mat.supr-con] Condensed Matter::Superconductivity 0103 physical sciences Proximity effect (superconductivity) [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 010306 general physics 0210 nano-technology Order of magnitude ComputingMilieux_MISCELLANEOUS [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall] |
Zdroj: | Physical Review B: Condensed Matter and Materials Physics (1998-2015) Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2017, 96 (2), ⟨10.1103/PhysRevB.96.024503⟩ Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2017, 96 (2), ⟨10.1103/PhysRevB.96.024503⟩ |
ISSN: | 1098-0121 1550-235X |
DOI: | 10.1103/PhysRevB.96.024503⟩ |
Popis: | We have realized laser-doped all-silicon superconducting (S)/normal metal (N) bilayers of tunable thickness and dopant concentration. We observed a strong reduction of the bilayers' critical temperature when increasing the normal metal thickness, a signature of the highly transparent S/N interface associated to the epitaxial sharp laser doping profile. We extracted the interface resistance by fitting with the linearized Usadel equations, demonstrating a reduction of 1 order of magnitude from previous superconductor/doped Si interfaces. In this well-controlled crystalline system we exploited the low-resistance S/N interfaces to elaborate all-silicon lateral SNS junctions with long-range proximity effect. Their dc transport properties, such as the critical and retrapping currents, could be well understood in the diffusive regime. Furthermore, this work led to the estimation of important parameters in ultradoped superconducting Si, such as the Fermi velocity, the coherence length, or the electron-phonon coupling constant, fundamental to conceive all-silicon superconducting electronics. |
Databáze: | OpenAIRE |
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