Ultrafast dynamics of hot carriers in a quasi–two-dimensional electron gas on InSe

Autor: Jacques Peretti, Jean-Pascal Rueff, Amina Taleb-Ibrahimi, Abhay Shukla, Zhesheng Chen, Luca Perfetti, Evangelos Papalazarou, Jelena Sjakste, Jingwei Dong, Marino Marsi
Přispěvatelé: Laboratoire des Solides Irradiés (LSI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Laboratoire de Chimie Physique - Matière et Rayonnement (LCPMR), Institut de Chimie du CNRS (INC)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Institut de minéralogie, de physique des matériaux et de cosmochimie (IMPMC), Muséum national d'Histoire naturelle (MNHN)-Institut de recherche pour le développement [IRD] : UR206-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique de la matière condensée (LPMC), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique des Solides (LPS), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
Rok vydání: 2020
Předmět:
Zdroj: Proc Natl Acad Sci U S A
Proceedings of the National Academy of Sciences of the United States of America
Proceedings of the National Academy of Sciences of the United States of America, National Academy of Sciences, 2020, 117 (36), pp.21962-21967. ⟨10.1073/pnas.2008282117⟩
Proceedings of the National Academy of Sciences of the United States of America, 2020, 117 (36), pp.21962-21967. ⟨10.1073/pnas.2008282117⟩
ISSN: 1091-6490
0027-8424
Popis: Two-dimensional electron gases (2DEGs) are at the base of current nanoelectronics because of their exceptional mobilities. Often the accumulation layer forms at polar interfaces with longitudinal optical (LO) modes. In most cases, the many-body screening of the quasi-2DEGs dramatically reduces the Fröhlich scattering strength. Despite the effectiveness of such a process, it has been recurrently proposed that a remote coupling with LO phonons persists even at high carrier concentration. We address this issue by perturbing electrons in an accumulation layer via an ultrafast laser pulse and monitoring their relaxation via time- and momentum-resolved spectroscopy. The cooling rate of excited carriers is monitored at doping level spanning from the semiconducting to the metallic limit. We observe that screening of LO phonons is not as efficient as it would be in a strictly 2D system. The large discrepancy is due to the remote coupling of confined states with the bulk. Our data indicate that the effect of such a remote coupling can be mimicked by a 3D Fröhlich interaction with Thomas–Fermi screening. These conclusions are very general and should apply to field effect transistors (FET) with high- [Formula: see text] dielectric gates, van der Waals heterostructures, and metallic interfaces between insulating oxides.
Databáze: OpenAIRE