Narrow-band photoreceiver OEIC on InP operating at 38 GHz

Autor: G. Unterborsch, R. Steingruber, A. Seeger, W. Schlaak, Heinz-Gunter Bach, E. Droge, André Strittmatter, Andreas Umbach, T. Engel, E.H. Bottcher, W. Passenberg, Dieter Bimberg, G.C. Mekonnen
Přispěvatelé: Publica
Jazyk: angličtina
Rok vydání: 1998
Předmět:
Fabrication
Materials science
iii-v semiconductors
38 GHz
Photodetector
High-electron-mobility transistor
Chemical vapor deposition
HEMT integrated circuits
chemical vapor deposition
mbe regrowth
Responsivity
monolithic integration
Stack (abstract data type)
metal-semiconductor-metal structures
lattice-matched InGaAs-inalas-InP layer stack
Electrical and Electronic Engineering
integrated optoelectronics
HEMT
InGaAs-InP
vapour phase epitaxial growth
optoelectronic integrated circuit
InGaAs-InAlAs-InP
business.industry
submicron msm photodetector
narrow-band photoreceiver oeic
mocvd growth
Atomic and Molecular Physics
and Optics
Electronic
Optical and Magnetic Materials
indium compounds
Wavelength
optical receivers
1.55 micron
metal-semiconductor-metal photodetector
metal-organic cvd
Optoelectronics
photodetectors
high-electron-mobility- transistors
fabrication process
business
Layer (electronics)
high-speed devices
Popis: We report on the successful monolithic integration of an InP-based photoreceiver operating in the narrow band around 38 GHz at a wavelength of 1.55 /spl mu/m, The optoelectronic integrated circuit (OEIC) incorporates two types of high-speed devices, a submicrometer metal-semiconductor-metal photodetector (MSM PD) made of InGaAs-InP and quarter-micrometer high-electron-mobility-transistors (HEMTs) based on a lattice-matched InGaAs-InAlAs-InP layer stack. For this purpose a fabrication process requiring only twelve main steps including a metal-organic chemical vapor deposition growth for the MSM PD layers and a MBE regrowth for the HEMT layers has been developed. At 38 GHz, a responsivity of 3.5 A/W for the OEIC is achieved.
Databáze: OpenAIRE
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