Reverse-Offset Printing of Metal-Nitrate-Based Metal Oxide Semiconductor Ink for Flexible TFTs
| Autor: | Asko Sneck, Nobuko Fukuda, Yasuyuki Kusaka, Jaakko Leppäniemi, Ari Alastalo |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science printed transistors Inkwell business.industry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences flexible electronics Flexible electronics Metal nitrate Electronic Optical and Magnetic Materials Metal Oxide semiconductor reverse offset printing visual_art 0103 physical sciences metal oxides visual_art.visual_art_medium Optoelectronics Offset printing 0210 nano-technology business |
| Zdroj: | Leppäniemi, J, Sneck, A, Kusaka, Y, Fukuda, N & Alastalo, A 2019, ' Reverse-Offset Printing of Metal-Nitrate-Based Metal Oxide Semiconductor Ink for Flexible TFTs ', Advanced Electronic Materials, vol. 5, no. 8, 1900272 . https://doi.org/10.1002/aelm.201900272 |
| ISSN: | 2199-160X |
| DOI: | 10.1002/aelm.201900272 |
| Popis: | Reverse-offset printing (ROP) is a novel printing technique capable of forming electronics-industry-relevant linewidths (≈1 µm) with good thickness control and sharp edge definition. It is demonstrated that through a controlled oxygen-plasma treatment, the energy of the surfaces related to the process steps of ROP can be optimized to allow the patterning of metal-oxide semiconductor layers using a simple printing ink based on metal nitrates dissolved in an organic solvent. The steps of the ROP process are analyzed using surface-energy measurements and Fourier transform infrared spectra of the ink during drying. Thin-film transistors (TFTs) fabricated using a roll-to-plate ROP of In2O3 semiconductor and evaporated Al source/drain (S/D) contacts show, on average, mobilities of 3.1 and 3.5 cm2 V−1 s−1, and ON/OFF-ratios up to 108 and 107 on a Si/SiO2 substrate and on a flexible polyimide-type substrate, respectively. TFTs on the flexible substrate with also the S/D-contacts printed with ROP using Ag nanoparticle ink exhibit a 1.4 cm2 V−1 s−1 mobility. To demonstrate the scalability of the process, continuous lines of In2O3 are printed using a roll-to-roll-compatible (R2R) ROP with linewidths down to ≈2 µm. This process is expected to lead to miniaturized metal-oxide circuits as required by flexible high-resolution sensor arrays and displays. |
| Databáze: | OpenAIRE |
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