Electrical And Optical Properties Of Well-Aligned Ho3+-Doped Zno Nanorods As An Alternative Transparent Conducting Oxide
| Autor: | Ercan Karaköse, Hakan Çolak |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Band gap Doping 0211 other engineering and technologies General Engineering Oxide Analytical chemistry 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Homogeneous distribution chemistry.chemical_compound chemistry Electrical resistivity and conductivity General Materials Science Nanorod Crystallite 0210 nano-technology 021102 mining & metallurgy |
| Popis: | In this study, the impacts of doping concentration on the crystal structure, morphology, electrical, and optical properties of Ho3+-doped zinc oxide (ZnO) nanorod (NR) arrays were studied. Structural and morphological characterizations showed that the Ho3+-doped ZnO NRs were crystallized in the (002) direction, and that they had a homogeneous distribution on the substrate. The crystallite sizes of the samples were between 50 nm and 65 nm. SEM analysis showed that every sample was hexagonal in shape. For the 1 and 5 mol.% Ho3+-doped ZnO NRs, the values for electrical conductivity were found to be 1.41 x 10(-7) and 8.29 x 10(-6) (omega cm)(-1) at 25 degrees C and 1.70 x 10(-5) and 1.24 x 10(-3) (omega cm)(-1) at 300 degrees C, respectively. The optical transmittances were between 80 and 93% for all the samples in the region from 400 to 1000 nm. The optical band gap values were determined to be between 3.180 and 3.195 eV. |
| Databáze: | OpenAIRE |
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