Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide
| Autor: | Hans Jürgen von Bardeleben, Jianqun Yang, Zhao Mu, Xingji Li, Weibo Gao, Milad Nonahal, Igor Aharonovich, Hongbing Cai, Xinge Yang, Soroush Abbasi Zargaleh, Johannes E. Fröch |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
FOS: Physical sciences Bioengineering 02 engineering and technology chemistry.chemical_compound Vacancy defect Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Silicon carbide General Materials Science Common emitter Quantum Physics Condensed Matter - Mesoscale and Nanoscale Physics business.industry Mechanical Engineering General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Quantum technology Ion implantation chemistry Qubit Optoelectronics Quantum Physics (quant-ph) 0210 nano-technology Ground state business Excitation |
| Zdroj: | Nano Letters. 20:6142-6147 |
| ISSN: | 1530-6992 1530-6984 |
| Popis: | Silicon carbide (SiC) has become a key player in realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR) with resonant excitation, and clearly identified the ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation of NV centers in SiC has been achieved with Rabi and Ramsey oscillations. Finally, we show the successful generation and characterization of single nitrogen vacancy (NV) center in SiC employing ion implantation. Our results are highlighting the key role of NV centers in SiC as a potential candidate for quantum information processing. |
| Databáze: | OpenAIRE |
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