Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy
| Autor: | Jean Philippe Nys, Tao Xu, Julien Sulerzycki, Bruno Grandidier, Didier Stiévenard, Gilles Patriarche |
|---|---|
| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Nanowire Nanochemistry Nanotechnology 02 engineering and technology Substrate (electronics) Electron Gold Droplet 01 natural sciences Seed Particle Materials Science(all) Sidewall Roughness 0103 physical sciences Perpendicular lcsh:TA401-492 General Materials Science Diffusion (business) 010306 general physics [PHYS]Physics [physics] Nano Express Condensed matter physics business.industry Length Growth Rate 021001 nanoscience & nanotechnology Condensed Matter Physics Semiconductor Molecular Beam Epitaxy lcsh:Materials of engineering and construction. Mechanics of materials 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Nanoscale Research Letters, Vol 6, Iss 1, p 113 (2011) Nanoscale Research Letters Nanoscale Research Letters, SpringerOpen, 2011, 6, pp.113-1-7. ⟨10.1186/1556-276X-6-113⟩ Nanoscale Research Letters, 2011, 6, pp.113-1-7. ⟨10.1186/1556-276X-6-113⟩ |
| ISSN: | 1931-7573 1556-276X |
| Popis: | We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of both types of NWs performed with electron microscopies reveal a marked difference between the roughnesses of their respective sidewalls. As the investigation of their length dependence on their diameter indicates that the growth of the NWs predominantly proceeds through the diffusion of adatoms from the substrate up along the sidewalls, difference in the sidewall roughness qualitatively explains the length variation measured between both types of NWs. The formation of atomically flat {111} sidewalls on the -oriented Ge NWs accounts for a larger diffusion length. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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