Trap-free heterostructure of PbS nanoplatelets on InP(001) by chemical epitaxy
| Autor: | Xiaodong Pi, Christophe Delerue, Louis Biadala, Manfred Bayer, Bruno Grandidier, Y. Lambert, Anthony Houppe, Dominique Deresmes, Tao Xu, Jimmy Xu, Gilles Patriarche, David Troadec, Jin Ho Kim, Wenbing Peng, Damien Canneson, Xavier Wallart, Maxime Berthe |
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| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique-IEMN (PHYSIQUE-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Pennsylvania State University (Penn State), Penn State System, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), State Key Laboratory of Silicon Materials, Zhejiang University, Experimentelle Physik 2, Technische Universität Dortmund [Dortmund] (TU), ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), ANR-10-EQPX-0050,TEMPOS,Microscopie electronique en transmission sur le plateau Palaiseau Orsay Saclay(2010), Physique - IEMN (PHYSIQUE - IEMN), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), School of Engineering, Brown University, Providence, RI, United States, ACKNOWLEDGMENTSThis study was financially supported by the EuropeanCommunity’s H2020 Program (grant no. PITN-GA-2016-722176, 'Indeed' Project), the EQUIPEX programs Excelsior(grant no. ANR-11-EQPX-0015) and Tempos (grant no.ANR-10-EQPX-0050)), the RENATECH network, and theNational Key Research and Development Program of China(grant no. 2017YFA0205700). T.X. acknowledges the financialsupport of the National Natural Science Foundation of China(grant no. 61775130), and J.X. thanks the University of Lilleand ARO for partial financial support. D.C. and M.B.acknowledge support of the Deutsche Forschungsgemeinschaftin the frame of ICRC TRR 160., RENATECH network |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Passivation chemical epitaxy Band gap Scanning tunneling spectroscopy General Physics and Astronomy 02 engineering and technology 010402 general chemistry Epitaxy 01 natural sciences nanocrystals General Materials Science PbS/InP heterostructures interfacial traps [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] [PHYS]Physics [physics] business.industry General Engineering Heterojunction 021001 nanoscience & nanotechnology Nanocrystalline material 0104 chemical sciences Semiconductor [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Optoelectronics scanning tunneling spectroscopy 0210 nano-technology business Molecular beam |
| Zdroj: | ACS Nano ACS Nano, American Chemical Society, 2019, 13 (2), pp.1961-1967. ⟨10.1021/acsnano.8b08413⟩ ACS Nano, 2019, 13 (2), pp.1961-1967. ⟨10.1021/acsnano.8b08413⟩ |
| ISSN: | 1936-0851 |
| DOI: | 10.1021/acsnano.8b08413⟩ |
| Popis: | International audience; Semiconductor nanocrystalline heterostructures can be produced by the immersion of semiconductor substrates into an aqueous precursor solution, but this approach usually leads to a high density of interfacial traps. In this work, we study the effect of a chemical passivation of the substrate prior to the nanocrystalline growth. PbS nanoplatelets grown on sulfur-treated InP (001) surfaces at temperatures as low as 95 °C exhibit abrupt crystalline interfaces that allow a direct and reproducible electron transfer to the InP substrate through the nanometer-thick nanoplatelets with scanning tunnelling spectroscopy. It is in sharp contrast with the less defined interface and the hysteresis of the current–voltage characteristics found without the passivation step. Based on a tunnelling effect occurring at energies below the bandgap of PbS, we show the formation of a type II, trap-free, epitaxial heterointerface, with a quality comparable to that grown on a nonreactive InP (110) substrate by molecular beam epitaxy. Our scheme offers an attractive alternative to the fabrication of semiconductor heterostructures in the gas phase. |
| Databáze: | OpenAIRE |
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