Laser generated Ge ions accelerated by additional electrostatic field for implantation technology
| Autor: | Lorenzo Giuffrida, Enza Fazio, Piotr Parys, Lorenzo Torrisi, Pawel Gasior, A. M. Mezzasalma, Jerzy Wolowski, L. Andò, Marcin Rosinski |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Analytical chemistry General Physics and Astronomy law.invention Ion symbols.namesake law Electric field Ion implantation Germanium Ions diagnostic Structural properties business.industry Pulse duration Surfaces and Interfaces General Chemistry Condensed Matter Physics Laser Surfaces Coatings and Films Amorphous solid Time of flight symbols Optoelectronics business Raman spectroscopy |
| Zdroj: | Applied Surface Science. 272:109-113 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2012.02.072 |
| Popis: | The paper presents research on the optimization of the laser ion implantation method with electrostatic acceleration/deflection including numerical simulations by the means of the Opera 3D code and experimental tests at the IPPLM, Warsaw. To introduce the ablation process an Nd:YAG laser system with repetition rate of 10 Hz, pulse duration of 3.5 ns and pulse energy of 0.5 J has been applied. Ion time of flight diagnostics has been used in situ to characterize concentration and energy distribution in the obtained ion streams while the postmortem analysis of the implanted samples was conducted by the means of XRD, FTIR and Raman Spectroscopy. In the paper the predictions of the Opera 3D code are compared with the results of the ion diagnostics in the real experiment. To give the whole picture of the method, the postmortem results of the XRD, FTIR and Raman characterization techniques are discussed. Experimental results show that it is possible to achieve the development of a micrometer-sized crystalline Ge phase and/or an amorphous one only after a thermal annealing treatment. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect