Fabrication of Nitrogen-Doped Diamond Field Emitter Utilizing Porous Silicon and Molding Technique
| Autor: | Tateki Kurosu, Ichiro Saito, Hideo Kiyota, Hideki Kimura, Kouji Inoue, Masamori Iida, Sung-Gi Ri, Takayuki Takida |
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| Rok vydání: | 2000 |
| Předmět: |
Fabrication
Materials science business.industry General Engineering Analytical chemistry General Physics and Astronomy Diamond Substrate (electronics) Chemical vapor deposition engineering.material Porous silicon Field electron emission Electric field engineering Optoelectronics business Common emitter |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | A nitrogen-doped columned-structure diamond field emitter (CSDFE) was fabricated by utilizing a molding technique on porous silicon (PS). The diamond film was deposited by the hot filament chemical vapor deposition method on a PS substrate after PS was seeded by diamond powder (less than 0.5 µm diameter) which acted as the nucleus. Electron emission and the stability of CSDFE were measured. It was found that at a lower electric field, that is, about 2.5 V/µm, the emission current of the CSDFE was higher than that prepared by an as-grown nitrogen-doped diamond field emitter. The emission current of the CSDFE was stable for a long operating time of over 8 h. |
| Databáze: | OpenAIRE |
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