Cu-Doped TiNxOy Thin Film Resistors DC/RF Performance and Reliability
| Autor: | Stepan O. Konovalov, Ivan V. Nemtsev, Lev V. Shanidze, F. A. Baron, A. S. Tarasov, Alexander S. Voloshin, I. A. Tarasov, N. V. Volkov, Mikhail V. Rautskiy, Fyodor V. Zelenov |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Technology
Materials science thin film QH301-705.5 QC1-999 copper doped titanium oxynitride law.invention Atomic layer deposition law non-linear General Materials Science Thin film Biology (General) Instrumentation high power density QD1-999 Sheet resistance Electronic circuit Fluid Flow and Transfer Processes business.industry Process Chemistry and Technology Physics General Engineering Engineering (General). Civil engineering (General) Evaporation (deposition) Computer Science Applications high-frequency passive components Chemistry resistors Optoelectronics Dry etching Resistor TA1-2040 business Temperature coefficient heterogeneous integration |
| Zdroj: | Applied Sciences, Vol 11, Iss 7498, p 7498 (2021) Applied Sciences Volume 11 Issue 16 |
| ISSN: | 2076-3417 |
| Popis: | We fabricated Cu-doped TiNxOy thin film resistors by using atomic layer deposition, optical lithography, dry etching, Ti/Cu/Ti/Au e-beam evaporation and lift-off processes. The results of the measurements of the resistance temperature dependence, non-linearity, S-parameters at 0.01–26 GHz and details of the breakdown mechanism under high-voltage stress are reported. The devices’ sheet resistance is 220 ± 8 Ω/□ (480 ± 20 µΩ*cm) intrinsic resistance temperature coefficient (TCR) is ~400 ppm/°C in the T-range of 10–300 K and S-parameters versus frequency are flat up to 2 GHz with maximum variation of 10% at 26 GHz. The resistors can sustain power and current densities up to ~5 kW*cm−2 and ~2 MA*cm−2, above which they switch to high-resistance state with the sheet resistance equal to ~200 kΩ/□ (~0.4 Ω*cm) caused by nitrogen and copper desorption from TiNxOy film. The Cu/Ti/TiNxOy contact is prone to ageing due to gradual titanium oxidation while the TiNxOy resistor body is stable. The resistors have strong potential for applications in high-frequency integrated and hybrid circuits that require small-footprint, medium-range resistors of 0.05–10 kΩ, with small TCR and high-power handling capability. |
| Databáze: | OpenAIRE |
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