Simultaneous Boron Emitter Diffusion and Annealing of Tunnel Oxide Passivated Contacts via Rapid Vapor-Phase Direct Doping
| Autor: | Marion Driesen, Armin Richter, Jana-Isabelle Polzin, Frank Feldmann, Bernd Steinhauser, Markus Ohnemus, Charlotte Weiss, Jan Benick, Stefan Janz |
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| Přispěvatelé: | Publica |
| Rok vydání: | 2022 |
| Předmět: |
Silicon
rapid vapor-phase direct doping (RVD) Atmosphere Furnaces Photovoltaic cells Electrical resistance measurement Condensed Matter Physics Electronic Optical and Magnetic Materials Annealing Boron emitter tunnel-oxide passivating contact (TOPCon) poly-si passivating contacts Electrical and Electronic Engineering Boron |
| DOI: | 10.24406/h-425887 |
| Popis: | n-type silicon-based tunnel-oxide passivating contact (TOPCon) solar cells are a cell concept reaching highest power conversion efficiencies. In this article, we demonstrate a substantial simplification of processing such TOPCon solar cells by reducing the number of high temperature processes. To this end, rapid vapor-phase direct doping (RVD) processes are applied for emitter formation and simultaneous annealing of the TOPCon layers within one process. RVD emitters with sheet resistances of 200 Ω sq -1 reach low emitter saturation current densities of 26 fA cm -2 on textured surfaces. Thermal interface oxides of the TOPCon layers were adapted to withstand the increased thermal budged of the RVD process. Optimized layers exhibit a saturation current density of less than 1 fA cm -2 and a contact resistance of 5 mΩ cm 2 . The best solar cell with the simultaneous emitter diffusion and TOPCon annealing during the RVD process reaches a confirmed efficiency of 23.3%, similar to a reference with sequential BBr 3 diffusion and subsequent TOPCon deposition and annealing reaching 23.1%. |
| Databáze: | OpenAIRE |
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