Monolithic fabrication of InSb-based photo-pixel for Mid-IR imaging
| Autor: | Chengzhi Xie, Mohsin Aziz, Vincenzo Pusino, Matthew J. Steer, David R. S. Cumming, Ata Khalid |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Fabrication Pixel business.industry Substrate (electronics) 01 natural sciences Photodiode law.invention Gallium arsenide 010309 optics chemistry.chemical_compound Optics Cardinal point chemistry law 0103 physical sciences Optoelectronics MESFET business Ohmic contact |
| Zdroj: | 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS). |
| Popis: | We present the monolithic fabrication of an active photo-pixel made in InSb on a GaAs substrate that is suitable for large-scale integration into a focal plane array. Pixel addressing is provided by the co-integration of a GaAs MESFET with an InSb photodiode. Various highly selective etch processes for distinct material layers were established. A low temperature annealed Ohmic contact was also achieved so that the processing temperature never exceeded 180 ˚C and no damage to the InSb detectors was observed. Furthermore, since there is a considerable etch step (> 6 μm) that metal must straddle without breaking, we developed an intermediate step using polyimide to provide a smoothing section between the lower MESFET and upper photodiode regions of the device. This heterogeneous technology creates great potential to realize a new type of monolithic focal plane array of addressable pixels for imaging in the medium wavelength infrared range. |
| Databáze: | OpenAIRE |
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