Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition
| Autor: | Matteo Bosi, Claudio Ferrari, Béla Pécz, G. Borionetti, Cesare Frigeri, Z. Osváth, Marco Negri, Ildikó Cora, Liudi Jiang, Giovanni Attolini, Ferenc Riesz, Elisa Buffagni, M. Calicchio |
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| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
SiC
defect Materials science growth 02 engineering and technology Substrate (electronics) Epitaxy 01 natural sciences Buffer (optical fiber) Deposition temperature chemistry.chemical_compound stomatognathic system 0103 physical sciences General Materials Science Composite material 010302 applied physics Strain (chemistry) epitaxy General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics material science Methyltrichlorosilane chemistry Lattice defects 0210 nano-technology Layer (electronics) optimization |
| Zdroj: | CrystEngComm (Camb., Online) 18 (2016): 2770–2779. doi:10.1039/c6ce00280c info:cnr-pdr/source/autori:Bosi, M.; Attolini, G.; Negri, M.; Ferrari, C.; Buffagni, E.; Frigeri, C.; Calicchio, M.; Pecz, B.; Riesz, F.; Cora, I.; Osvath, Z.; Jiang, L.; Borionetti, G./titolo:Defect structure and strain reduction of 3C-SiC%2FSi layers obtained with the use of a buffer layer and methyltrichlorosilane addition/doi:10.1039%2Fc6ce00280c/rivista:CrystEngComm (Camb., Online)/anno:2016/pagina_da:2770/pagina_a:2779/intervallo_pagine:2770–2779/volume:18 |
| DOI: | 10.1039/c6ce00280c |
| Popis: | 3C-SiC layers were deposited on Si substrates by using a low temperature buffer layer and the addition of methyltrichlorosilane (MTS) to the gas phase during the high temperature thick film growth. Several samples were grown by varying the deposition temperature and the MTS content in order to study how these parameters affect the layer quality and the lattice defects. All of the grown layers are single crystalline and epitaxial to the substrate. The formation of empty voids at the SiC/Si interface was successfully avoided. The surface of the layers grown with MTS addition was smoother and contained less residual strain. A 15 mu m thick 3C-SiC sample was grown using an optimized process in order to evaluate its residual strain and bow. |
| Databáze: | OpenAIRE |
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